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Raman Spectroscopy and Optical Characterization of Thermoelectric Devices From Ni/Bi2Te3/Sb2Te3/Ni Thin Films

Undergraduate #334
Discipline: Physics
Subcategory: Materials Science

Richard A. Hammond Jr. - Alabama A&M University
Co-Author(s): Aschalew Kassu, Satilmis Budak, Zhigang Xiao, Xavier Crutcher, and Anup Sharma, Alabama A&M University, Huntsville, AL



Thermoelectric devices from Ni/Bi2Te3/Sb2Te3/Ni thin films were prepared. The thin films are deposited by using DC/RF magnetron sputtering and E-beam deposition systems. The surface morphology of the fabricated thermoelectric films is characterized using Scanning Electron Microscope (SEM). Raman Spectroscopic technique is used for identification of inherent molecular specificity and analysis of chemical compositions of the films. The resonant features of the scattering spectra measured under the 532 nm and 785 nm wavelength excitation lasers are analyzed.

Funder Acknowledgement(s): Research was sponsored by NSF with grant numbers NSF-HBCU-RISE-1546965, NSF-EPSCOR-R-II-3-EPS-1158862, DOD with grant numbers W911 NF-08-1-0425, and W911NF-12-1-0063, U.S. Department of Energy National Nuclear Security Administration (DOE-NNSA) with grant numbers DE-NA0001896 and DE-NA0002687.

Faculty Advisor: Aschalew Kassu, aschalew.kassu@aamu.edu

Role: Using Raman Spectroscopic techniques to identify inherent molecular specificity and analysis of chemical compositions.

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This material is based upon work supported by the National Science Foundation (NSF) under Grant No. DUE-1930047. Any opinions, findings, interpretations, conclusions or recommendations expressed in this material are those of its authors and do not represent the views of the AAAS Board of Directors, the Council of AAAS, AAAS’ membership or the National Science Foundation.

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