Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films

Faculty #62
Discipline: Physics
Subcategory: STEM Research
- University of Maryland Eastern Shore
Co-Author(s): Benjamin K Barnes, University of Maryland Eastern Shore

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The discovery of resistance switching memristors marks a paradigm shift in the search for alternative non-volatile memory components in the semiconductor industry. Normally a dielectric in these bistable memory cells changes its resistance with an applied electric field or current, albeit retaining the resistive state based on the history of the applied field. Despite showing immense potential, sustainable growth of this new memory technology is bogged down by several factors including cost, intricacies of design, lack of efficient tunability, and issues with scalability and eco-friendliness. Here, we demonstrate a simple arrangement wherein an ethanol-adsorbed ZnO thin film exhibits orders of magnitude change in resistance when activated by visible light. We show that there exists two stable ohmic states, one in the dark and the other in the illuminated regime, as well as a significant delay in the transition between these saturated states. We also demonstrate that visible light acts as a non-invasive tuning parameter for the bistable resistive states. Furthermore, a pinched hysteresis I-V response observed in these devices indicate what seems to be a new type of memristive behaviour.

Funder Acknowledgement(s): National Science Foundation HBCU-UP Award # 171942; Department of Education MSEIP Award # P120A170068

Faculty Advisor: None Listed,