Structural and Electrical Property Correlation of Titanium Doped Hafnium Oxide Ferroelectric Thin Film

Graduate #128
Discipline: Technology and Engineering
Subcategory: Materials Science

Jasmine Z. Beckford - Norfolk State University
Co-Author(s): Irving K. Cashwell, Norfolk State University, Norfolk, VA.; Sangram K. Pradhan, Norfolk State University, Norfolk, VA.; Messaoud J. Bahoura,Norfolk State University, Norfolk, VA.

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HfO2 films are showing ferroelectric like behavior through crystallographic transformation at high temperature annealing. With the application of an applied electric field, the geometry of the oxygen atoms in the unit cell of Hafnium Oxide changes orientations to induce a remnant polarization and enhanced through doping which has been proven through preliminary experimentation. We have investigated the process of polarization enhancement through systematic doping of Ti into HfO2 film by atomic layer deposition. In this report we have demonstrated that the HfO2 films show a very interesting ferroelectric hysteresis like behavior in titanium doped films. Structural analysis was completed to explain the correlation between crystal structure and ferroelectric like behavior.

Not Submitted

Funder Acknowledgement(s): NSF-CREST Grant number HRD 1547771 and NSF-CREST Grant number HRD 1036494

Faculty Advisor: Dr. Messaoud Bahoura, mbahoura@nsu.edu

Role: I assisted with the characterization.