Discipline: Technology and Engineering
Sesegma Rygzydmaeva - University of the District of Columbia
Nanotechnology has developed rapidly in the past couple of decades and by 2020 it will leave virtually no aspect of life untouched. Silicon Nanowire Field-Effect transistors (FET) have several desirable features for designing nanoscale systems capable of interacting with and detecting biological systems and signaling processes. The methodology is based on the detection of the local change in charge density (field effect) that characterizes the recognition event between a target molecule and the surface receptor. When biological molecules bind to the FET gate they can change the gate charge distribution resulting in a change in conductance of the FET channel. The scope of this research is to engineer scalable and reproducible structure of semiconductor nanowires with good electrical performance and increase current, improve sensitivity and normalize sensor responses. We will fabricate Tri-Gate Horizontal Nanowire (HNW) FETs that provide perfect electrostatic control due to a better control of the gate over the channel. After surface modification steps, as a result we obtain a biological transducer, – biosensor. This research is supported by NSF/HBCU-UP grants 1622811 and 1531014.
Funder Acknowledgement(s): This research is supported by NSF/HBCU-UP grants 1622811 and 1531014.
Faculty Advisor: Dr. Esther T. Ososanya, firstname.lastname@example.org
Role: I conducted this research myself.