Discipline: Technology and Engineering
Subcategory: Materials Science
Martin Carrasco-Munoz - Pennsylvania State University
Bismuth selenide (Bi2Se3), bismuth telluride (Bi2Te3) and their alloys can exhibit topological insulator behavior with possible future applications in the areas of spintronic and quantum computing devices. However, high carrier concentrations in the bulk of these materials can result in conduction through the bulk that overshadows the unique surface ‘spin-aligned’ conduction that is the signature of a topological insulator. Carrier concentration, determined using room and low (4K) temperature Hall measurements, was used in this study to determine the optimum stoichiometry to minimize bulk carrier density, i.e. minimize bulk conduction, in bulk crystals of Bi2(Se,Te)3 of various stoichiometric ratios grown using a vertical Bridgman configuration.
Not SubmittedFunder Acknowledgement(s): EFRI-REM Program ; National Science Foundation ; The Pennsylvania State University
Faculty Advisor: Dr. Ronald Redwing, rdr10@psu.edu
Role: I was responsible for preparing all samples (though cleaving and exfoliation) and performing all room temperature hall measurements. Low temperature hall measurements were performed under the guidance and supervision of Dr. Anthony Richardella. The bulk crystal samples were grown and provided by Dr. David Snyder.