Emerging Researchers National (ERN) Conference

nsf-logo[1]

  • About
    • About AAAS
    • About the NSF
    • About the Conference
    • Partners/Supporters
    • Project Team
  • Conference
  • Abstracts
    • Abstract Submission Process
    • Presentation Schedules
    • Abstract Submission Guidelines
    • Presentation Guidelines
    • Undergraduate Abstract Locator (2020)
    • Graduate Abstract Locator (2020)
    • Faculty Abstract Locator (2020)
  • Travel Awards
  • Resources
    • App
    • Award Winners
    • Code of Conduct-AAAS Meetings
    • Code of Conduct-ERN Conference
    • Conference Agenda
    • Conference Materials
    • Conference Program Books
    • ERN Photo Galleries
    • Events | Opportunities
    • Exhibitor Info
    • HBCU-UP/CREST PI/PD Meeting
    • In the News
    • NSF Harassment Policy
    • Plenary Session Videos
    • Professional Development
    • Science Careers Handbook
    • Additional Resources
    • Archives
  • Engage
    • Webinars
    • Video Contest
    • Video Contest Winners
    • ERN 10-Year Anniversary Videos
    • Plenary Session Videos
  • Contact Us

Fabrication and Characterization of Aluminum Doped Zinc Oxide Thin Film transistors Grown by Radio Frequency Sputtering Technique

Graduate #69
Discipline: Nanoscience
Subcategory: Nanoscience
Session: 3
Room: Park Tower 8228

Kelsea A. Yarbrough - Norfolk State University
Co-Author(s): Sangram K. Pradhan, Norfolk State University, Norfolk, VA; Messaoud Bahoura, Norfolk State University, Norfolk, VA



In this present generation, display technology has rapidly advanced the necessity for commercial products for small handheld devices to large TVs. The backbone of these applications require a central operation of a Thin Film Transistor (TFT). Commercially, TFTs are being developed using hydrogenated amorphous silicon (a-Si:H) and/or indium gallium doped zinc oxide (IGZO). However a-Si:H is not a naturally transparent material, exhibits low mobility and possesses large leakage currents. Along with the shortcomings of a-Si:H, IGZO requires high fabrication and annealing temperatures, and also indium element is a rare element, proceeding to very limited storage on earth. The indium-free oxide-based channel material such as aluminum-doped zinc oxide (AZO) is an alternative material and can be fabricated on glass substrate for TFT application. High quality AZO thin films were grown using radio frequency (RF) sputtering technique on n-type silicon, glass, and sapphire for characterization purposes. The AZO thin films were grown at different temperatures and thicknesses to analyze the effect growth morphology and transistor characteristics. The effect of Al content on zinc oxide crystal lattice were investigated by Atomic Force Microscopy (AFM), X-ray diffraction, Field Emission-Scanning Electron Microscopy (FE-SEM), Ultra-violet visible spectroscopy, and Keithley 4200 Semiconductor Characterization System (SCS). AFM provided thin film roughness, grain size, and surface morphology. FE-SEM was performed to show cross sectional view of the fully developed thin film transistor. Keithley 4200 SCS provided transistor characteristics including on/off ratio, mobility, and threshold voltage. The present work will provide valuable scientific input of AZO TFTs for the improvement of TFT devices.

Funder Acknowledgement(s): This work is supported by the NSF-CREST Grant number HRD 1547771 and NSF-CREST Grant number HRD 1036494.

Faculty Advisor: Sangram K. Pradhan, skpradhan@nsu.edu

Role: The research I conducted was characterization of the AZO active layer including electrical, optical and structural characterization. Along with the characterization, I also conducted the fabrication of the AZO TFT. Assistance for the transistor characteristics was provided by the co-authors.

ERN Conference

The 2022 ERN Conference has been postponed.

Full Notice

What’s New

  • Congratulations to Zakiya Wilson-Kennedy on her 2021 AAAS Fellowship
  • Event Vaccination and Liability Policy
  • Webinars
  • Events|Opportunities
  • AAAS CEO Comments on Social Unrest, Racism, and Inequality
  • Maintaining Accessibility in Online Teaching During COVID-19
  • In the News
  • HBCU/CREST PI/PD Meeting

Conference Photos

ERN Conference Photo Galleries

Awards

ERN Conference Award Winners

Checking In

nsf-logo[1]

This material is based upon work supported by the National Science Foundation (NSF) under Grant No. DUE-1930047. Any opinions, findings, interpretations, conclusions or recommendations expressed in this material are those of its authors and do not represent the views of the AAAS Board of Directors, the Council of AAAS, AAAS’ membership or the National Science Foundation.

AAAS

1200 New York Ave, NW Washington,DC 20005
202-326-6400
Contact Us
About Us

The World's Largest General Scientific Society

Useful Links

  • Membership
  • Careers at AAAS
  • Privacy Policy
  • Terms of Use

Focus Areas

  • Science Education
  • Science Diplomacy
  • Public Engagement
  • Careers in STEM

 

  • Shaping Science Policy
  • Advocacy for Evidence
  • R&D Budget Analysis
  • Human Rights, Ethics & Law
© 2022 American Association for the Advancement of Science