Subcategory: Materials Science
Room: Exhibit Hall
Amanda Román Ashby - University of Puerto Rico - Mayagüez
Co-Author(s): Camilo Verbel, University of Puerto Rico - Mayagüez, USA; Manuel Lozano, University of Puerto Rico - Mayagüez, USA; and Armando Rúa de la Asunción, University of Puerto Rico - Mayagüez, USA.
Modern-day advancements demand high gain, low profile, devices that allow adaptability in multiple conditions for potential spaceborne millimeter/microwave systems such as radars, radiometers, and communication systems. With the development of 4G and 5G technologies, these devices have increased exponentially over the past decade and are expected to improve data transfer rates while optimizing their cost-efficiency, performance, and size. To develop cost-efficient materials for these systems, there has been numerous research for the vanadium oxides in RF functions such as switching or filtering, mainly through VO2. However, the relatively low transition temperature of VO2 of Tc = 68 °C hinders its usability for developing radio frequency applications, because it is required to have a switching temperature above 80 °C . V3O5 is a Magnelli phase of vanadium oxide, exhibiting a metal-insulator-transition (MIT) near 160 °C, the highest known temperature value among all vanadium oxides. The resistivity of V3O5 gradually changes by a factor of three from room temperature to MIT temperature.  In this work, we investigated the radio-frequency characteristic of the electrical activation of the metal-insulator transition in V3O5 into a two-terminal device. Thin V3O5 films were deposited on SiO2/Si by reactive DC magnetron sputtering. The surface structure, composition, and topography of the films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and atomic force microscopy (AFM) and). Resistivity measurements and current-voltage (I-V) characteristics have been measured from 300 to 500K. The material showed rough surfaces and different grain sizes, and, through electrical measurements, they were shown to undergo an MIT transition close to 160 °C. It was also observed that the diffraction planes were similar to those seen for the material in bulk. Future steps for this research would involve the design of the device and testing its operation in W-band frequency. The location of the material placed on the device and the trigger for the transition to take place must also be considered. Andrei Muller et al. ACS Appl. Electron. Mater. 2, 1262 (2020). Armando Rúa et al. J. Appl. Phys. 121, 235302 (2017).
Funder Acknowledgement(s): The authors gratefully acknowledge support from the National Science Foundation, Award No. 2033328, and from the UPRM College of Arts and Sciences.Amanda Román Ashby acknowledges the support by the Puerto Rico Louis Stokes Alliance for Minority Participation.This research used resources of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704.
Faculty Advisor: Armando Rúa de la Asunción, email@example.com
Role: Developed V3O5 thin films using DC Magnetron Sputtering.Performed material characterization through electrical measurements and atomic force microscopy (AFM).Developed graphs and visuals of the collected data.