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Ferroelectricity in Physical Vapor Deposited Undoped Hafnium Oxide

Graduate #130
Discipline: Technology and Engineering
Subcategory: Materials Science

Irving K Cashwell Jr - Norfolk State University
Co-Author(s): Pradhan, Sangram K.; Harrigan, Kazon; Bahoura, Messaoud J.



Studies of Ferroelectric properties of the high-k dielectric material Hafnium Oxide (HfO2) are very important for CMOS memory applications. In this research, we have performed and investigated the electrical and structural properties of undoped metal-oxide thin films. The HfO2 films were deposited on platinized silicon by the electron beam evaporation technique at room temperature using HfO2 pellets. XPS results show the phase stoichiometry. The XRD results confirm that crystallographic nature of the HfO2 underwent a crystalline reorientation on annealing at 700oC with film thickness of 60 nm. The HfO2 films show pronounced polarization vs. electric field (PE) hysteresis loop reveal that the HfO2 film is showing ferroelectric like behavior with increase in both remanent and saturation polarization value of 19 μC/cm2 with an increase in O2 pressure from 20 mtorr to 40 mtorr O2 pressure during annealing causing a structural change within the thin film.

Not Submitted

Funder Acknowledgement(s): NSF-CREST HRD 1547771 and NSF-CREST HRD 1036494

Faculty Advisor: Dr M J Bahoura, mbahoura@nsu.edu

Role: Fabrication, Characterizations and write up of results and discussion

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This material is based upon work supported by the National Science Foundation (NSF) under Grant No. DUE-1930047. Any opinions, findings, interpretations, conclusions or recommendations expressed in this material are those of its authors and do not represent the views of the AAAS Board of Directors, the Council of AAAS, AAAS’ membership or the National Science Foundation.

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