Discipline: Technology and Engineering
Subcategory: Materials Science
Irving K Cashwell Jr - Norfolk State University
Co-Author(s): Pradhan, Sangram K.; Harrigan, Kazon; Bahoura, Messaoud J.
Studies of Ferroelectric properties of the high-k dielectric material Hafnium Oxide (HfO2) are very important for CMOS memory applications. In this research, we have performed and investigated the electrical and structural properties of undoped metal-oxide thin films. The HfO2 films were deposited on platinized silicon by the electron beam evaporation technique at room temperature using HfO2 pellets. XPS results show the phase stoichiometry. The XRD results confirm that crystallographic nature of the HfO2 underwent a crystalline reorientation on annealing at 700oC with film thickness of 60 nm. The HfO2 films show pronounced polarization vs. electric field (PE) hysteresis loop reveal that the HfO2 film is showing ferroelectric like behavior with increase in both remanent and saturation polarization value of 19 μC/cm2 with an increase in O2 pressure from 20 mtorr to 40 mtorr O2 pressure during annealing causing a structural change within the thin film.Not Submitted
Funder Acknowledgement(s): NSF-CREST HRD 1547771 and NSF-CREST HRD 1036494
Faculty Advisor: Dr M J Bahoura, firstname.lastname@example.org
Role: Fabrication, Characterizations and write up of results and discussion