Room: Park Tower 8216
Kelsea Yarbrough - Norfolk State Universty
Co-Author(s): Dr.Sangram K. Pradhan, Norfolk State University,Norfolk,Va;Makhes K. Behara, Norfolk State University,Norfolk,Va;Dr.Messaoud J. Bahoura, Norfolk State University, Norfolk,Va
Liquid crystal display (LCD) addressed by amorphous silicon (a-Si:H) thin-film transistors (TFTs) has been currently used for large area display applications. However, a-Si:H is not a naturally transparent material, has low mobility, and large leakage currents. Therefore, zinc oxide (ZnO) based transparent thin films are widely used as a novel replacement materials for a-Si:H, because they are inexpensive, having excellent optical and electrical properties, good uniformity, transparency, and easy fabrication technique. Nonetheless, transparent indium gallium zinc oxide (IGZO) TFT has been extensively studied for an alternative to a-Si TFT. However, IGZO thin film requires high fabricating and annealing temperatures, and also indium element is a rare element, proceeding to very limited storage on earth. The indium-free oxide-based channel materials such as tin doped zinc oxide (TZO) fabricated on glass has been broadly studied. High quality TZO thin films were grown using Electron Beam Evaporation/Pulsed Laser Deposition technique on n ? type silicon and glass substrates at different temperatures to analyze the effect of growth morphology. The effect of Sn content on structure microstructures, surface morphology and opto-electronic properties of the films were investigated by X-ray diffraction, atomic force microscopy (AFM), field emission-scanning electron microscopy (FE-SEM), ultra-violet visible spectroscopy, and electrical characteristics. AFM provided thin film roughness, grain size, and surface morphology for both glass and silicon substrates. FE-SEM was used to show the surface morphology with change in deposition time and temperature. The present work will provide valuable scientific input of TZO thin films for the improvement of TFT devices.
Funder Acknowledgement(s): This work is supported by the NSF-CREST Grant number HRD 1547771 and NSF-CREST Grant number HRD 1036494.
Faculty Advisor: Dr.Messaoud J. Bahoura, firstname.lastname@example.org
Role: For this research, I characterized the thin film by doing various depositions at different time, pressure, and dopant ratios. After characterization I performed characterization techniques to observe the high quality uniform thin films. The characterization techniques that I performed was ultra-violet visible spectroscopy, atomic force microscopy, and field-emission scanning electron microscopy. Following the characterization techniques I performed some electrical measurements by the keithly 4200.